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t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 1 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com applications ? commercial and military radar ? communications product features ? frequency range: 2 C 6 ghz ? nf: 1.0 db ? otoi: 30 dbm at pout/tone = 18 dbm ? small signal gain: 22 db ? return loss: >10 db ? p1db: 18 dbm, p sat = 26 dbm at p in = 10 dbm ? bias: v d = 10 v, i dq = 100 ma, v g = - 2. 3 v ? package dimensions: 4.0 x 4.0 x 0.85 mm functional block diagram general description triquints tga2611 - sm is a packaged broadband low noise amplifier fabricated on triquints tqgan25 0.25 um gan on sic process . the tga2611 - sm operates from 2 to 6 ghz and typically provides >18 dbm p1db, >22 db of small signal gain and 30 dbm of otoi with 1.0 db nf. in addition to the high overall electrical performance, this gan amplifier also provides a high level of input power robustness which allows more flexibility in designing the receive chain circuit protection. the tga2611 - sm i s available in a low cost, surface mount 20 - lead 4x4 mm plastic qfn. it is ideally suited to support both radar and satellite communication applications. both rf ports have intergraded dc blocking caps and are fully matched to 50 ohms. lead - free and ro hs compliant evaluation boards are available upon request. p ad configuration p ad no. symbol 1, 2, 4 - 9, 11, 12, 14, 15, 17 - 20 n / c 3 rf in 10 v g 13 rf out 16 v d ordering information part eccn description tga2611 - sm ear99 2 C 6 ghz gan lna
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 2 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 4 0 v gate voltage range (v g ) - 5 to 0 v drain current (i d ) 300 ma gate current (i g ) - 1 to 4 ma power dissipation , 85 c (p diss ) 6 w input power , cw, 50 , (p in ) 30 dbm channel temperature (t ch ) 275 c mounting temperature (30 seconds) 26 0 c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 10 v drain current (i d q ) 1 0 0 m a gate voltage (v g ) - 2. 3 v typical temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed overall operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 10 v, i d q = 1 0 0 m a, v g = - 2.3v typical , cw parameter min typical max units operational frequency range 2 6 ghz small signal gain > 22 db input return loss > 10 db output return loss > 1 0 db noise figure 1 db output power at 1 db gain compression > 18 dbm output toi at pout/tone = 18 dbm 30 dbm gain temperature coefficient - 0.0 3 db/c noise figure temperature coefficient 0.007 db/c
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 3 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c , v d = 10 v (cw) i d q = 100 ma, i d _drive = 19 5 ma p in = 10 dbm, p out = 28 dbm, freq = 4 ghz, p diss = 1.3 w 19 oc/w channel temperature (t ch ) (under rf drive) 110 c median lifetime (t m ) 2.3 x 10^11 hrs notes: 1. thermal resistance measured at back of the package. test conditions: v d = 40 v; failure criteria is 10% reduction in i d_max 16 17 18 19 20 21 22 0.5 1.0 1.5 2.0 2.5 3.0 r jc (c/w) p diss (w) thermal resistance vs. p diss t base = 85 0 c, cw 0.9 1.0 1.1 1.2 1.3 1.4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 power dissipation (w) frequency (ghz) p diss vs. frequency vs. t base 85 c 25 c - 40 c v d = 10 v, i dq = 100 ma, p in = 10 dbm, cw
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 4 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : small signal conditions unless otherwise specified: v d = 10 v, i dq = 10 0 ma, v g = - 2. 3 v typical , cw -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 1 2 3 4 5 6 7 8 s11 (db) frequency (ghz) input return loss vs. freq. vs. temperature 85 c 25 c - 40 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 1 2 3 4 5 6 7 8 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. 85 c 25 c - 40 c 0 1 2 3 4 1 2 3 4 5 6 7 noise figure (db) frequency (ghz) noise figure vs. freq. vs. temperature - 40 c 25 c 85 c 16 19 22 25 28 31 1 2 3 4 5 6 7 8 s21 (db) frequency (ghz) gain vs. frequency vs. temperature 85 c 25 c - 40 c 16 19 22 25 28 31 1 2 3 4 5 6 7 8 s21 (db) frequency (ghz) gain vs. frequency vs. v d 12 v 10 v 8 v
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 5 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : large signal c onditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical , c w 10 12 14 16 18 20 22 24 26 28 30 1 2 3 4 5 6 7 8 p sat (dbm) frequency (ghz) p sat vs. frequency vs. temp. 85 c 25 c - 40 c p in = 10 dbm 10 12 14 16 18 20 22 24 26 28 30 1 2 3 4 5 6 7 8 p sat (dbm) frequency (ghz) p sat vs. frequency vs. v d 8 v 10 v 12 v p in = 10 dbm, temp = 25 c 10 12 14 16 18 20 22 24 26 28 30 -15 -10 -5 0 5 10 15 20 output power (dbm) input power (dbm) output power vs. input power vs. freq. 2 ghz 4 ghz 6 ghz temp = 25 c 10 12 14 16 18 20 22 24 26 28 30 -15 -10 -5 0 5 10 15 20 output power (dbm) input power (dbm) output power vs. input power vs. temp. - 40 c 25 c 85 c 4 ghz 16 17 18 19 20 21 22 23 24 2 3 4 5 6 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature 85 c 25 c - 40 c 16 17 18 19 20 21 22 23 24 2 3 4 5 6 p1db (dbm) frequency (ghz) p1db vs. frequency vs. v d 12 v 10 v 8 v temp = 25 c
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 6 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : large signal c onditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical , c w 0 5 10 15 20 25 30 35 40 45 1 2 3 4 5 6 7 8 power - added efficiency (%) frequency (ghz) pae vs. frequency vs. v d 12 v 10 v 8 v p in = 10 dbm, temp = 25 c 0 5 10 15 20 25 30 35 40 45 1 2 3 4 5 6 7 8 power - added efficiency (%) frequency (ghz) pae vs. frequency vs. temp. 85 c 25 c - 40 c p in = 10 dbm 0 5 10 15 20 25 30 35 40 -15 -10 -5 0 5 10 15 20 power - added efficiency (%) input power (dbm) pae vs. input power vs. freq. 6 ghz 4 ghz 2 ghz temp = 25 c 10 12 14 16 18 20 22 24 26 28 30 -15 -10 -5 0 5 10 15 20 gain (db) input power (dbm) gain vs. input power vs. temp. - 40 c 25 c 85 c 4 ghz 10 12 14 16 18 20 22 24 26 28 30 -15 -10 -5 0 5 10 15 20 gain (db) input power (dbm) gain vs. input power vs. freq. 2 ghz 4 ghz 6 ghz temp= 25 c 10 12 14 16 18 20 22 24 26 28 30 -15 -10 -5 0 5 10 15 20 gain (db) input power (dbm) gain vs. input power vs. v d 8 v 10 v 12 v temp= 25 c, 2 ghz
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 7 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: large signal c onditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical , c w 120 140 160 180 200 220 240 2 3 4 5 6 7 8 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. 85 c 25 c - 40 c p in = 10 dbm 120 140 160 180 200 220 240 2 3 4 5 6 7 8 drain current (ma) frequency (ghz) drain current vs. frequency vs. v d 12 v 10 v 8 v p in = 10 dbm, temp = 25 c 80 100 120 140 160 180 200 220 240 -12 -9 -6 -3 0 3 6 9 12 15 18 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 6 ghz 4 ghz 2 ghz temp = 25 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 3 4 5 6 7 8 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d 12 v 10 v 8 v p in = 10 dbm, temp = 25 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 3 4 5 6 7 8 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. 85 c 25 c - 40 c p in = 10 dbm 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -12 -9 -6 -3 0 3 6 9 12 15 18 gate current (ma) input power (dbm) gate current vs. input power vs. freq. 6 ghz 4 ghz 2 ghz temp = 25 c
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 8 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: linearity c onditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical , c w 25 26 27 28 29 30 31 32 33 34 35 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 otoi (dbm) frequency (ghz) otoi vs. frequency vs. temperature 85 c 25 c - 40 c pout/tone = 18 dbm, 10 mhz tone spacing 25 26 27 28 29 30 31 32 33 34 35 0 5 10 15 20 25 otoi (dbm) output power/tone (dbm) otoi vs. output power vs. frequency temp = 25 c, 10 mhz ton e spacing 2 ghz 4 ghz 6 ghz -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 im3 (dbc) output power/tone (dbm) im3 vs. output power vs. frequency 2 ghz 4 ghz 6 ghz temp = 25 c, 10 mhz ton e spacing -100 -90 -80 -70 -60 -50 -40 -30 -20 0 5 10 15 20 25 im5 (dbc) output power/tone (dbm) im5 vs. output power vs. frequency temp = 25 c, 10 mhz ton e spacing 2 ghz 4 ghz 6 ghz -60 -55 -50 -45 -40 -35 -30 -25 -20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 im5 (dbc) frequency (ghz) im5 vs. frequency vs. temperature 85 c 25 c - 40 c pout/tone = 18 dbm, 10 mhz tone spacing -33 -30 -27 -24 -21 -18 -15 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 im3 (dbc) frequency (ghz) im3 vs. frequency vs. temperature 85 c 25 c - 40 c pout/tone = 18 dbm, 10 mhz tone spacing
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 9 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: harmonics c onditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical , c w -70 -60 -50 -40 -30 -20 -10 0 0 3 6 9 12 15 18 21 24 2 f 0 output power (dbc) fundatmental ouput power (dbm) 2 nd harmonic vs. output power vs. freq. 2 ghz 4 ghz 6 ghz temp = 25 c -80 -70 -60 -50 -40 -30 -20 -10 0 0 3 6 9 12 15 18 21 24 3 f 0 output power (dbc) fundamental output power (dbm) 3 rd harmonic vs. output power vs. freq. 2 ghz 4 ghz 6 ghz temp = 25 c -60 -55 -50 -45 -40 -35 -30 -25 -20 0 3 6 9 12 15 18 21 24 2 f 0 output power (dbc) fundamental output power (dbm) 2 nd harmonic vs. output power vs. temp. - 40 c 25 c 85 c 4 ghz -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 0 3 6 9 12 15 18 21 24 3 f 0 output power (dbc) fundamental output power (dbm) 3 rd harmonic vs. output power vs. temp. - 40 c 25 c 85 c 4 ghz
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 10 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com application information bias - up procedure 1. set i d limit to 30 0 ma, i g limit to 3 ma 2. apply - 5 v to v g for pinch off 3. apply +10 v to v d 4. adjust v g more positive until i dq = 100 ma (v g ~ - 2.3 v typical ) 5. apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 5v. ensure i dq ~ 0ma 3. set v d to 0v 4. turn off v d supply 5. turn off v g supply pin description p in n o. symbol description 1, 2, 4 - 9, 11, 12, 14, 15, 17 - 20 n / c recommend grounding on pcb 3 rf in input; matched to 50 ; dc blocked 10 v g gate voltage; b ias network is required; see recommended application information above. 13 rf out output ; matched to 50 ; dc blocked 1 6 v d drain voltage; b ias network is required; see recommended application information above. 21 gnd ground paddle. multiple vias should be employed to minimize inductance and thermal resistance. v g c2 0.01 uf r3 5 ohm c3 1 uf v d c1 0.01 uf
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 11 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com evaluation board bill of material reference des. value description manuf. part number c1, c2 0.01 f cap, 0402, 50 v, 10 % , x7r various c3 1 f cap, 1206, 50 v, 10 % , x7r various r1, r2 0 ohms res, 0402 , 5% (required for above evb design) various r3 5 ohms res, 0603 , 5% various c1 pin1 r3 c2 c3 rf in rf out v d gnd v g gnd r2 r1
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 12 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com mechanical information units: mm tolerances: unless specified x.xx = 0.25 x.xxx = 0.127 x.xxxx = 0.0254 angles = 0.5 materials: base: cu alloy all metalized features are nipdau plated part is mold encapsulated marking: 2611: part number yy: part assembly year ww: part assembly week x xxx : lot id
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 13 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com recommended soldering temperature profile
t ga2611 - sm 2 - 6 ghz gan lna preliminary datasheet: rev - 0 1 - 29 - 15 - 14 of 1 4 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change witho ut notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent r ights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving , or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint : web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for tech nical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability comp atible with the latest version of j - std - 020, lead - free solder, 260c roh s compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level tbd at tbdc convection reflow the part is rated moisture sensitivity level tbd at tbdc per jedec standard ipc/jedec j - std - 020. eccn us department of commerce : ear99

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